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Direct observation and temperature control of the surface Dirac gap in the topological crystalline insulator (Pb,Sn)Se

机译:直接观察和温度控制表面Dirac间隙   拓扑结晶绝缘体(pb,sn)se

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摘要

Since the advent of topological insulators hosting symmetry-protected Diracsurface states, efforts have been made to gap these states in a controllableway. A new route to accomplish this was opened up by the discovery oftopological crystalline insulators (TCIs) where the topological states areprotected by real space crystal symmetries and thus prone to gap formation bystructural changes of the lattice. Here, we show for the first time atemperature-driven gap opening in Dirac surface states within the TCI phase in(Pb,Sn)Se. By using angle-resolved photoelectron spectroscopy, the gapformation and mass acquisition is studied as a function of composition andtemperature. The resulting observations lead to the addition of a temperature-and composition-dependent boundary between massless and massive Dirac states inthe topological phase diagram for (Pb,Sn)Se (001). Overall, our resultsexperimentally establish the possibility to tune between a massless and massivetopological state on the surface of a topological system.
机译:自从出现具有对称保护的Diracsurface状态的拓扑绝缘子问世以来,人们就努力以可控的方式消除这些状态。通过发现拓扑晶体绝缘体(TCI),开辟了一条新的途径,其中拓扑状态受到实际空间晶体对称性的保护,因此易于因晶格结构变化而形成间隙。在这里,我们首次显示了在(Pb,Sn)Se的TCI相中Dirac表面态中温度驱动的缝隙开口。通过使用角度分辨光电子能谱,研究了间隙的形成和质量的获得,其与成分和温度的关系。所得的观察结果导致在(Pb,Sn)Se(001)的拓扑相图中,无质量态和块状狄拉克态之间增加了温度和成分相关的边界。总体而言,我们的结果通过实验确定了在拓扑系统表面上的无质量和大规模拓扑状态之间进行调整的可能性。

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